Skip to Main content Skip to Navigation
Journal articles

Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces

Abstract : The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light power. The results are compared with the predictions of a model which includes the bias dependence of the tunnel barrier height and the bias-induced decrease of surface recombination velocity. It is found that i) the tunnel photocurrent from the conduction band dominates that from surface states. ii) At large tunnel distance the exponential bias dependence of the current is explained by that of the tunnel barrier height, while at small distance the change of surface recombination velocity is dominant
Document type :
Journal articles
Complete list of metadata
Contributor : Stephen Arscott Connect in order to contact the contributor
Submitted on : Monday, July 11, 2022 - 10:09:06 AM
Last modification on : Wednesday, August 31, 2022 - 4:46:23 PM


Files produced by the author(s)



D. Vu, S. Arscott, Emilien Peytavit, R. Ramdani, E. Gil, et al.. Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2010, 82 (11), pp.115331-1-12. ⟨10.1103/PhysRevB.82.115331⟩. ⟨hal-02345816⟩



Record views


Files downloads