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Article Dans Une Revue IEEE Photonics Technology Letters Année : 2019

1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

Résumé

This letter reports on a 1.3-µm reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with −7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators.
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Dates et versions

hal-02307202 , version 1 (30-10-2019)

Identifiants

Citer

Jianan Duan, Heming Huang, Bozhang Dong, Daehwan Jung, Justin C Norman, et al.. 1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon. IEEE Photonics Technology Letters, 2019, 31 (5), pp.345-348. ⟨10.1109/LPT.2019.2895049⟩. ⟨hal-02307202⟩
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