Low linewidth enhancement factor and high optical feedback resistance of p-doped silicon based quantum dot lasers

J. Duan (1) , H. Huang (1) , D. Jung (2) , J. Norman (2, 2) , J. E Bowers (2, 2) , F. Grillot (1, 3)

1 LTCI - Laboratoire Traitement et Communication de l'Information
2 UC Santa Barbara - University of California [Santa Barbara]
3 CHTM - Center for High Technology Materials

This work shows that p-doped quantum dot lasers grown on silicon exhibit a low linewidth enhancement factor and hence a high resistance against optical feedback which are promising for isolator-free transmissions in photonic integrated circuits.

Domaines: Optique / photonique

J. Duan, H. Huang, D. Jung, J. Norman, J. E Bowers, et al.. Low linewidth enhancement factor and high optical feedback resistance of p-doped silicon based quantum dot lasers. 2018 IEEE Photonics Conference (IPC), Sep 2018, Reston, United States. pp.1-2, ⟨10.1109/IPCon.2018.8527184⟩. ⟨hal-02307227⟩