Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers

J. Duan (1) , B. Dong (1) , H. Huang (1) , Z. G Lu (2) , P. J Poole (2) , F. Grillot (3, 4, 5)

1 LTCI - Laboratoire Traitement et Communication de l'Information
2 Advanced Electronics and Photonics Research Centre, NRC Canada, 1200 Montreal Road, Ottawa K1A 0R6, Canada
3 CHTM - Center for High Technology Materials
4 GTO - Télécommunications Optiques
5 COMELEC - Département Communications & Electronique

This paper experimentally investigates the thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers. Using a distributed feedback cavity made with symmetric antireflection coatings, a minimum linewidth of 300 kHz is unveiled. This narrow line is found rather constant with the injection current and the temperature range (293 K-313 K). However, under certain operating conditions, a linewidth rebroadening is also observed, which may be attributed to the spectral hole burning and to the variations of the alpha-factor with the temperature and bias current. Nevertheless, these results confirm the potential of this technology for manufacturing low-phase noise oscillators for coherent optical communications.

Mots clés: spectral linewidth; rebroadening; Quantum dots; Distributed feedback lasers

Domaines: Optique / photonique

J. Duan, B. Dong, H. Huang, Z. G Lu, P. J Poole, et al.. Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers. 2019 Compound Semiconductor Week (CSW), May 2019, Nara, Japan. pp.1-2, ⟨10.1109/ICIPRM.2019.8819315⟩. ⟨hal-02307323⟩