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Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering

Abstract : LaTiOxNy thin films have been deposited by RF sputtering on (001) Nb-doped SrTiO3 and (001) MgO single-crystalline substrates at high temperature (TS = 800 °C) under different nitrogen ratios in the plasma (vol.% N2 = 0, 25, 71). The band gaps ranged from Eg = 3.30 eV for the epitaxial transparent film containing no nitrogen to Eg = 2.65 eV for the textured coloured film containing a moderate amount of nitrogen. Dielectric characterization in the frequency range [100 Hz-1 MHz], using a metal-insulator-metal structure, has shown a stable permittivity and loss tangent of the epitaxial low-nitrided LaTiOxNy film with values of ε′ = 135 and tanδ = 1.2 10− 2 at 100 kHz (RT).
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https://hal.archives-ouvertes.fr/hal-00693204
Contributor : Laurent Le Gendre Connect in order to contact the contributor
Submitted on : Wednesday, May 2, 2012 - 10:56:02 AM
Last modification on : Tuesday, December 6, 2022 - 12:42:14 PM

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Ahmed Ziani, Claire Le Paven-Thivet, Didier Fasquelle, Laurent Le Gendre, Ratiba Benzerga, et al.. Dielectric oxynitride LaTiOxNy thin films deposited by reactive radio-frequency sputtering. Thin Solid Films, 2012, 520 (14), pp.4536-4540. ⟨10.1016/j.tsf.2011.10.192⟩. ⟨hal-00693204⟩

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