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hal-00596129v1  Journal articles
K. RomanjekE. AugendreW. van den DaeleB. GrandchampL. Sanchez et al.  Improved GeOI substrates for pMOSFET off-state leakage control
Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1585-1588
hal-00596131v1  Journal articles
M. CharbonnierCédric LerouxV. CosnierP. BessonF. Martin et al.  Tuning the dipole at the High-/SiO2 interface in advanced metal gate stacks.
Microelectronic Engineering, Elsevier, 2009, 86, pp.1740-1742
hal-00465767v1  Journal articles
Dominique FleuryAntoine CrosGrégory BidalJulien RosaGérard Ghibaudo. A New Technique to Extract the Source/Drain Series Resistance of MOSFETs
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30 (9), pp.975 - 977. ⟨10.1109/LED.2009.2026592⟩
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hal-00917094v1  Journal articles
Raphael ClercGérard Ghibaudo. ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETS IN THE QUASI BALLISTIC REGIME
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2013, 22 (1), pp.1350002. ⟨10.1142/S012915641350002X⟩
hal-00186393v1  Journal articles
Gwenaël GaboritJean-Louis CoutazLionel Duvillaret. Vectorial electric field measurement using isotropic electro-optic crystals
Applied Physics Letters, American Institute of Physics, 2007, 90, pp.241118. ⟨10.1063/1.2748364⟩
hal-00996640v1  Journal articles
F. RouxS. AmtablianM. AntonG. BesnardL. Bilhaut et al.  Chalcopyrite thin-film solar cells by industry-compatible ink-based process
Solar Energy Materials and Solar Cells, Elsevier, 2013, 115, pp.86-92. ⟨10.1016/j.solmat.2013.03.029⟩
hal-01075241v1  Journal articles
Hemour S.Florence PodevinXavier P.. Le spectromètre à ondes stationnaires et à transformée de Fourier : un outil de dosimétrie RF large bande et temps réel à bas coût
La Revue de l'électricité et de l'électronique, Société de l'Électricité, de l'Électronique et des Technologies de l'Information et de la Communication, 2009, 11 (12), pp.118-121
hal-01017441v1  Journal articles
K.H. XueP. BlaiseL.R.C. FonsecaG. MolasE. Vianello et al.  Grain boundary composition and conduction in HfO2: An ab initio study
Applied Physics Letters, American Institute of Physics, 2013, 102 (20), pp.201908. ⟨10.1063/1.4807666⟩
hal-01017480v1  Journal articles
Z. FangH.Y. YuW. J. FanG. GhibaudoJ. Buckley et al.  Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low Frequency Noise Analysis
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (Issue3), pp.1272-1275. ⟨10.1109/TED.2013.2240457⟩
hal-00596168v1  Journal articles
K.I. NaS. CristoloveanuY.H. BaeP. PatrunoW. Xiong et al.  Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs
Solid-State Electronics, Elsevier, 2009, 53 (2), pp.150-153
hal-00596355v1  Journal articles
Y. XuT. MinariK. TsukagoshiJ. ChroboczekF. Balestra et al.  Origin of low-frequency noise in pentacene field-effect transistors
Solid-State Electronics, Elsevier, 2010, pp.In Press, Corrected Proof, Available online 4 February 2011
hal-00994309v1  Journal articles
Yong XuW. ScheidelerChuan LiuF. BalestraK. Tsukagoshi. Contact thickness effects in bottom-contact coplanar organic field-effect transistors
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2013, 34 (4), pp.535-7. ⟨10.1109/LED.2013.2244059⟩
hal-02006550v1  Journal articles
Hee-Sung KangDong-Seok KimChul-Ho WonYoung-Jo KimYoung Jun Yoon et al.  Impact of Multi-Layer Carbon-Doped/Undoped GaN Buffer on Suppression of Current Collapse in AlGaN / GaN HFETs
International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2014, 23 (03n04), pp.1450017. ⟨10.1142/S0129156414500177⟩
hal-02006362v1  Journal articles
Carlos NavarroJoris LacordMukta Singh PariharFikru Adamu-LemaMeng Duan et al.  Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (11), pp.4486-4491. ⟨10.1109/TED.2017.2751141⟩
hal-02006622v1  Journal articles
Ki-Sik ImVodapally SindhuriYoung-Woo JoDong-Hyeok SonJae-Hoon Lee et al.  Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach
Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2015, 8 (6), pp.066501. ⟨10.7567/APEX.8.066501⟩
hal-02007846v1  Journal articles
K. LeeMaryline BawedinM. PariharH.-J. ParkSorin Cristoloveanu. The Virtual Diode with Electrostatic Doping
ECS Transactions, Electrochemical Society, Inc., 2017, 77 (5), pp.191-196. ⟨10.1149/07705.0191ecst⟩
hal-01985323v1  Journal articles
Matthias JostJay GautamLeonardo GomesRoland ReeseErsin Polat et al.  Miniaturized Liquid Crystal Slow Wave Phase Shifter Based on Nanowire Filled Membranes
IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers, 2018, 28 (8), pp.681-683. ⟨10.1109/LMWC.2018.2845938⟩