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tel-00461948v1  Theses
Dominique Fleury. Contribution à l'étude expérimentale du transport dans les transistors de dimensions déca-nanométriques des technologies CMOS sub-45nm
Micro et nanotechnologies/Microélectronique. Institut National Polytechnique de Grenoble - INPG, 2009. Français
hal-01020468v1  Conference papers
M. AkraEmmanuel PistonoA. JradP. Ferrari. Nouvelle technique de suppression des remontées parasites hors bande pour les filtres passe-bande à rubans couplés
18èmes journées nationales micro-ondes, JNM'13, May 2013, Paris, France. pp.JNM'13
hal-00603733v1  Conference papers
K. TachiT. ErnstC. DupreA. HubertS. Becu et al.  -FET: electrostatics and influence of spacer thickness.
5th EUROSOI Workshop, Jan 2009, Göteborg, Sweden
hal-01074829v1  Conference papers
Xavier P.Belli-Riz. A.-M.Frau J.-Y.. “« Caractérisation de l’atténuation radiofréquence de matériaux isolants naturels du bâtiment »
11èmes Journées Caractérisation Microondes et Matériaux, Mar 2010, Brest, France
hal-01074770v1  Conference papers
Belmas F.Fournier J.M.Hameau F.. “A New Method for Performance Control of a Differential Active Inductor for Low Power 2.4GHz applications
EEE International Conference on IC Design and Technology, Jun 2010, Grenoble, France
hal-01074804v1  Conference papers
Sahyoun W.Benech P.Duchamp J.-M.. “An improved wide-band model of CRF Filters using two different approaches”
, Asia-Pacific Microwave Conference 2010, Dec 2010, Yokohama, Japan
hal-01074800v1  Conference papers
Sahyoun W.Duchamp J.-M.Benech P.. “Coupled Resonator Filters: wide-band modeling, frequency versus pseudo-time characterizations”
Fourth International Conference on Micro- Nanoelectronics, Nanotechnologies and MEMs, Dec 2010, Athens, Greece
hal-02009987v1  Conference papers
Hong Phuong PhanTan-Phu VuongPhilippe BenechPascal XavierPascal Borel. “Hello-Shaped” wideband monopole antennas on paper substrate
2017 International Conference on Advanced Technologies for Communications (ATC), Oct 2017, Quy Nhon, Vietnam. pp.35-38
hal-01074304v1  Journal articles
Quémerais T.Moquillon L.Huard V.Fournier J.M.Benech P. et al.  “Hot Carrier Stress Effect on a CMOS 65 nm 60 GHz One Stage Power Amplifier” , vol. 31, no. 9, pp. 927-929, Sept. 2010.
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31 (9), pp.927-929
hal-01074798v1  Conference papers
Denis DeschachtRivaz S. DeFarcy A.Lacrevaz T.Fléchet B.. “Keep on shrinking interconnect size: is it still the best solution ?”
IEEE Int. Electronics Manufacturing Technology Conf., Nov 2010, Melaka, Malaysia
hal-01074519v1  Conference papers
Roullard J.Capraro S.Eid E.Cadix L.Bermond C. et al.  “Quality Factor and Frequency Bandwidth of 2D Self Inductors in 3D Integration Stack”
Materials for Advanced Metallization, Mar 2010, Mechelen, Belgium
hal-01074764v1  Conference papers
Sahyoun W.Benech P.Duchamp J.-M.. “Wide-band modelling of Coupled Resonator Filters with measurement restrictions”
11th International Symposium on RF MEMS and RF Microsystems,, Jun 2010, Otranto, Italy
hal-01074766v1  Conference papers
Cadix L.Rousseau M.Fuchs C.Leduc P.Thuaire A. et al.  « Integration and frequency dependent electrical modeling of Through Silicon Vias (TSV) for high density 3DICs”
IEEE International Interconnect Technology Conference,, Jun 2010, San Francisco, United States
hal-01074810v1  Conference papers
Henda ChaabouniRousseau M.Leduc P.Farcy A.Farhane R. El et al.  « Investigation on TSV impact on 65nm CMOS devices and circuits »
, IEEE International Electron Devices Meeting,, Dec 2010, San Francisco, United States
hal-02066006v1  Conference papers
David EsseniMarco PalaRevelant A.P. PalestriM. Li et al.  (Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects
226th ECS and SMEQ Joint International Meeting: SiGe,Ge and Related Compounds: Materials, Processing and Devices 6, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico
hal-02014042v1  Conference papers
Francis Balestra. (Invited) Challenges to Nano-Scale Device World
22th ECS Meeting: 17th Int. Symposium on Advanced CMOS-Compatible Semiconductor Devices, Y. Omura, J.A. Martino, J.P. Raskin, S. Selberherr, H. Ishi, F. Gamiz and B. Nguye, May 2015, Chigaco, United States
hal-02014039v1  Journal articles
F. Balestra. (Invited) Challenges to Nano-Scale Device World
ECS Transactions, Electrochemical Society, Inc., 2015, 66 (5), pp.211-222. ⟨10.1149/06605.0211ecst⟩
hal-02051924v1  Conference papers
Gilles ReimboldCharles LerouxCarlos Suarez SegoviaPushpendra KumarXavier Garros et al.  (Invited) Dipoles in Gate-Stack/FDSOI Structure
232nd ECS Meeting: 15th Symposium on Seminconductors, Dielectrics and Metals for Nanoelectronics, D. Misra, S. De Gendt, M. Houssa K. Kita and D. Landheer, Oct 2017, Washington DC, United States