Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100) GaAs thin films - Couches nanométriques : formation, interfaces, défauts Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2010

Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100) GaAs thin films

J. L. Cantin
  • Fonction : Auteur
A. Lemaître

Résumé

Phosphorous alloying in the y=0.06 range allows to engineer ferromagnetic Ga1-xMnxAs1-yPy/(100) GaAs thin films with standard x=0.07 Mn doping in which the easy axes of magnetization can be changed from in-plane to out-of-plane by a small (10 K) temperature rise. Ferromagnetic resonance investigations show the reorientation to be induced by the different temperature dependence of the cubic and uniaxial anisotropy constants. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3353997]
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Dates et versions

hal-01237483 , version 1 (03-12-2015)

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Citer

M. Cubukcu, H. J. Von Bardeleben, J. L. Cantin, A. Lemaître. Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100) GaAs thin films. Applied Physics Letters, 2010, 96 (10), pp.102502. ⟨10.1063/1.3353997⟩. ⟨hal-01237483⟩
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