Interaction of atomic hydrogen with the beta-SiC(100) 3x2 surface and subsurface - Couches nanométriques : formation, interfaces, défauts Accéder directement au contenu
Article Dans Une Revue Journal of Chemical Physics Année : 2007

Interaction of atomic hydrogen with the beta-SiC(100) 3x2 surface and subsurface

Résumé

We investigate clean and atomic hydrogen exposed beta-SiC(100) 3 x 2 surfaces by synchrotron radiation-based Si 2p core-level photoemission spectroscopy. The clean 3 x 2 surface reconstruction exhibits three surface and subsurface components. Upon hydrogen exposures, those surface and subsurface components are shifted to lower binding energies by large values, indicating significant charge transfer to the surface and subsurface regions, in excellent agreement with the recently discovered H-induced beta-SiC(100) 3 x 2 surface metallization. In addition, the interaction of hydrogen results in a large reactive component at Si 2p supporting an asymmetric charge transfer in the third plane below the surface, in agreement with previous experimental investigations. However, the results are inconsistent with recent ab initio theoretical ``frozen'' calculations predicting H atom to be in a bridge-bond position. (C) 2007 American Institute of Physics.
Fichier non déposé

Dates et versions

hal-01290167 , version 1 (17-03-2016)

Identifiants

Citer

Marie d'Angelo, H. Enriquez, N. Rodriguez, V. Yu. Aristov, P. Soukiassian, et al.. Interaction of atomic hydrogen with the beta-SiC(100) 3x2 surface and subsurface. Journal of Chemical Physics, 2007, 127 (16), pp.164716. ⟨10.1063/1.2799993⟩. ⟨hal-01290167⟩
140 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More