RBS and NRA analysis for films with high growth rate prepared by atomic layer deposition

B. Xia (1, 2) , J.J. J Ganem (1, 2) , S. Steydli (1, 2) , H. Tancrez (1, 2) , Ian Vickridge (1, 2)

1 SAFIR - Système d'Analyse par Faisceaux d'Ions Rapides
2 INSP - Institut des Nanosciences de Paris

We present the design and operation of a specialized Atomic Layer Deposition (ALD) system, dedicated to stable isotopic tracing experiments of oxide film growth, using isotopically labelled water as the oxide reactant. A small chamber volume allows operation with only very small quantities of water vapor, minimising the consumption of the isotopically labelled water. The first results for growth of ZnO and TiO2 using Diethlyzinc (DEZ) and Tetrakis(dimethylamino)titanium (TDMAT) as the zinc and titanium precursors, and unlabelled water as reactant, are presented, to establish the growth conditions for stoichiometric ZnO and TiO2 on silicon. Absolute film compositions and thickness are determined by RBS and NRA as a function of vapor pulse duration, number of ALD cycles and substrate temperature. Physical thickness is determined by ellipsometry. The first results obtained for growth of ZnO using water highly enriched in 18O are also presented.

Mots clés: Atomic Layer Deposition (ALD); Thin films; multilayer; RBS

Domaines: Physique [physics]

B. Xia, J.J. J Ganem, S. Steydli, H. Tancrez, Ian Vickridge. RBS and NRA analysis for films with high growth rate prepared by atomic layer deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2021, 489, pp.20-25. ⟨10.1016/j.nimb.2020.12.015⟩. ⟨hal-03264045⟩