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Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser

Abstract : This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.
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https://hal.archives-ouvertes.fr/hal-00081543
Contributor : Gaëlle Lucas-Leclin Connect in order to contact the contributor
Submitted on : Tuesday, June 27, 2006 - 2:38:46 PM
Last modification on : Thursday, October 6, 2022 - 10:41:24 AM
Long-term archiving on: : Monday, September 20, 2010 - 4:11:45 PM

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Mathieu Jacquemet, Manuela Domenech, Julie Dion, Martin Strassner, Gaëlle Lucas-Leclin, et al.. Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser. Proceedings SPIE Photonics Europe, 2006, Strasbourg, France. 11 p. ⟨hal-00081543v2⟩

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